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JMnic Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION With TO-220C package High breakdown voltage High speed switching PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 6 2 50 150 -55~150 ae ae UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ae /W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC3163 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=400V ;IB=0 100 |I A ICBO Collector cut-off current VCB=500V ;IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 100 |I A hFE-1 DC current gain IC=3A ; VCE=2V 15 hFE-2 DC current gain IC=6A ; VCE=2V 8 fT Transition frequency IC=0.6A ; VCE=10V 20 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3163 Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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